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Please contact ROKKO at
Attention Mr.:EGAWA/
Overseas Sales Dept.

TEL: 81-798-65-4508
FAX: 81-798-67-5038

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平成24年度西宮市優良事業所顕彰受賞


ROKKO ELECTRONICS Co., Ltd.

Zipp: 663-8105
8-5, Nakajima-cho, Nishinomiya-city, Hyogo, Japan





SIIQ

NEDIA

SiCアライアンス

SiC及び関連ワイドギャップ半導体研究会

パワーデバイス・イネーブリング協会


New factory opened exclusive
for new material wafer processing

2017/01〜

〜New materials:SiC,Sapphie,LT,etc〜


●Increased processing capacity to cope with mass-production.

●Separated from silicon wafer processing, wafer incoming〜
  delivery to be one-pass process.

●Cost advantage by the process reduction.

●Mass production started in March, 2017.

事業案内 ■ Sapphire processing services事業案内

Rokko provides an integrated sapphire wafer processing service (Grinding → Polishing → RCA cleaning) through the well-developed technologies.
Rokko has developed techniques to utilize its existing semiconductor tools and equipment for sapphire wafer operations. In comparison of the conventional equipment available in the sapphire industry, Rokko’s process has its advantages in throughput, wafer warpage, roughness, and flexibility of wafer size.



1軸グラインダー


1軸グラインダー
TREX610

TREX610
Measurable elements: 12 elements (S, Cl, K, Ca, Ti, Cr,Mn,Fe,Co,Ni,Cu,Zn)
candela CS20

candela CS20
Wafer Size: 3, 4, 5, and 6 Inch
Measurable thickness: 300-1400um
自動スクラブ洗浄装置
New Equipment:
After polishing, residues contain alkaline substances results in becoming polishing marks or sources of particle. Removing such residues before coated by native oxide films is one of the key techniques in polishing.
In our conventional process, wafers are cleaned piece by piece through operator’s manual scrubbing. Now, Rokko introduced the automated cleaning equipment to eliminate human errors and deviation of quality to achieve the uniform stable quality.

■Wafer Size:4・5・6・8 inch
■Thicknesss: 〜 100μm
■Patterned・ M EMS and SOIWafer
Glass supported wafers also can be processed.
自動スクラブ洗浄装置

自動スクラブ洗浄装置
High cleaning performance.
自動スクラブ洗浄装置

自動スクラブ洗浄装置
Wafer Size:4・5・6・8 inch
Sapphire and SiC wafers can be processed


Sapphire wafer process

Comparison of Sapphire wafer process


  Conventional process Rokko's process
  Diamond lapping Polishing, CMP Grinding Polishing, CMP
Running cost High
(Metal wheels + Diamonds)
Moderate
(Pads + Slurry)
Moderate
(Diamond wheels)
Moderate
(Pads + slurry)
Required level of process technology High Moderate High High
Cost of equipment High Moderate High High
Throughput Very low
(0.2-20um/min)
Low
(1-2/2-3hr)
Moderate
(6-120um/min)
Moderate
(1-2um/0.5-2hr)
Remarks Wax mounting
Difficulties in lapping table adjustment
Higher number of process is required.
Wax mounting
Difficulties in lapping table adjustment
Vacuum chucking system
Utilization of Si process equipment
Fully automated machines
Vacuum chucking system
Utilization of Si process equipment
Single wafer polishing machine
(Self-developed)


Sapphire wafer grinding process

Sapphire wafer grinding ・ polishing process
3, 4 inch - C surface


Process Process speed
(um/min)
Roughness
Ra (um)
Removals
(um)
Rough grinding 120 0.478 〜500um
Send grinding 90 Under evaluation 〜350um
Final grinding (1) 80 0.380 〜50um
Final grinding (2) Under evaluation Under evaluation 〜50um
Final grinding (3) Under evaluation Under evaluation 〜40um
Final grinding (4) 30 0.026 〜30um
Final grinding (5) Under evaluation Under evaluation 〜5um
CMP Under evaluation Under evaluation for under 1nm 〜3um
Proposing high efficiency (High throughput with low abrasion) process


Sapphire wafer process

Rokko's grinding ・ polishing process


Grinding machine Utilized the conventional Si wafer processing equipment
→ High efficiency (high throughput / low abrasion) process
Wafer size compatibility Large diameter can be processed (single wafer process)
→ Si wafer grinding machine (Up to 8 inch diameter)
Wafer mounting
(Device protection)
Wafer surface protection tape method (Same as Si wafer process)
→ Wax less process (Save wax reduction process and cost)
Grinding Slurry Application of fixed abrasive grinding slurry instead of loose abrasive→Eliminating slurry wastes
Surface roughness High speed precise process by grinding wheel
→ Roughness level meets CMP pretreatment process
Wafer Sori Able to process without stressing wafers until dicing frame mounting
Polishing (CMP) High quality process with free abrasive grains (Colloidal Silica)
Capable of servicing from grinding to CMP from a single wafer production
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六甲電子株式会社
兵庫県西宮市中島町8番5号 TEL : 0798-65-4508
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