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Please contact ROKKO at
Attention Mr.:EGAWA/
Overseas Sales Dept.

TEL: 81-798-65-4508
FAX: 81-798-67-5038

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for pattern wafer RCA cleaning


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平成24年度西宮市優良事業所顕彰受賞


ROKKO ELECTRONICS Co., Ltd.

Zipp: 663-8105
8-5, Nakajima-cho, Nishinomiya-city, Hyogo, Japan





SIIQ

NEDIA

SiCアライアンス

SiC及び関連ワイドギャップ半導体研究会

パワーデバイス・イネーブリング協会


■  MEMS・Prototype

Rokko’s experience in this field enables the company to meet the diverse needs in MEMS applications through its special grinding and polishing technique. This service can be applied from a single wafer prototyping to mass productions. Rokko is well experienced in grinding and polishing SOI・glass/Si mounted, through-holed, cavity structured, through-silicon via (TSV) and non-circular wafers.

■ Expamples of MEMS products


● Thinned Wafer

 Diameter: φ200mm
 Thickness: 32μm
 BG: DFG8540 #2000 Finish


● GWSS(Glass Wafer Support System)

 Diameter: φ200mm
 Thickness: 11μm
 BG: DFG8540 #2000 Finish
 Glass: 1.0mm Pyrex


● GWSS(Glass Wafer Support System)

 Diameter: φ200mm
 Thickness: 4.7μm
 BG: DFG8540 #2000 Finish
 Glass: 1.0mm Pyrex
* The color of wafer changes from red to yellow when its thickness become less than 5um.


● Cavity structured wafer

 Diameter: φ150mm
 Thickness: 100μm
 BG: DFG8540 #2000 Finish



● Cavity structured wafer

 The above wafer was thinned by 5um.


ナイフエッジ防止加工機

『Customer needs』
● How do you prevent wafers from being broken or chipped after wafer thing process? These damages are mainly caused by either human handling or equipment conveyance and it dose affects your process yield. How do you want to solve this problem?

Rokko provides pre-grinding beveling services meeting the diversified requirements of finished thickness (ex. 100 um or 50um).

Through the NC control beveling, Rokko is capable of processing wafers with various thickness without changing polishing pads.

ナイフエッジ防止加工機

Crick here for the video clip showing a dropping test result of 6 inch wafers “with” and “without beveling” →
YOUTUBE
Knife edege proventing process unit

Knife edege proventing process unit
Wafer size: 4, 5, 6, 8 Inch
Knife edege proventing process unit

Knife edege proventing process unit
Through NC control system, shapes of edge can be adjusted according to its thickness.
back grinding
Rokko has over 10 years of experiences in the wafer thinning business with various types of wafers from SOI・glass/Si mounted to normal mass production wafers (100-150um thickness).
We are making our continuous efforts to improve the yields of wafers received from our customers.
MEMS applications: SOI・glass/Si mounted, through-holed, cavity structured, through-silicon via (TSV) and non-circular wafers
backside grinder

backside grinder
Wafer Size: 4, 5, 6, 8 Inch
backside grinder

backside grinder
Achieving higher yields through daily maintenance checks.

New Functions:
In the conventional process, wafer thickness is measured by an in-process gauge. Rokko has just installed the machine equipped with NCG (non-contact type gauge) which allows the machine to measure wafer thickness by laser without touching. In the newly developed process, all wafers including MEMS such as cavity structured, holed wafers can be measured.

NCG(ノンコンタクトゲージ)
■Wafer Size:5・6・8inch
■Thickness: 100〜150μm
■MEMS Wafer process

Rokko is well experienced in processing various kinds of wafers such as SOI・glass/Si mounted, through-holed, cavity structured, through-silicon via (TSV) and non-circular wafers.


Single wafer type backside polishing
In this process, wafers are mirror-polished by removing small roughness on a wafer surface. This process requires highly sofisticate polishing techniques to avoid any distortions or scratches on wafer surfaces.

■Merits of Single wafer process:
●It is a wax-less process that allows to achieve higher cleanness levels by reducing cleaning requirements.
●A single wafer process equipment can polish wafers more efficiently than the bach type and it also requires less removals in comparison.
●A single wafer process provides more accurate polishing and it also helps to achieve higher flatness levels.
Single wafer type backside polishing

Single wafer type backside polishing
Wafer Size: 4, 5, 6, 8 Inch
Single wafer type backside polishing

Single wafer type backside polishing
This machine is capable of processing thinned wafers and MEMS wafers.

New equipment:8 inch single wafer polishing machine
■Wafer Size:4・5・6・8inch
■Best thinning achievement:8inch 85μm
8インチ対応枚葉式ポリッシュ

8インチ対応枚葉式ポリッシュ
Wafer Size:4・5・6・8inch
8インチ対応枚葉式ポリッシュ

8インチ対応枚葉式ポリッシュ
Best thinning achievement:8inch 85μm
自動スクラブ洗浄装置
New Equipment:
After polishing, residues contain alkaline substances results in becoming polishing marks or sources of particle. Removing such residues before coated by native oxide films is one of the key techniques in polishing.
In our conventional process, wafers are cleaned piece by piece through operator’s manual scrubbing. Now, Rokko introduced the automated cleaning equipment to eliminate human errors and deviation of quality to achieve the uniform stable quality.

■Wafer Size:4・5・6・8 inch
■Thicknesss: 〜 100μm
■Patterned・ M EMS and SOIWafer
Glass supported wafers also can be processed.
自動スクラブ洗浄装置

自動スクラブ洗浄装置
High cleaning performance.
自動スクラブ洗浄装置

自動スクラブ洗浄装置
Wafer Size:4・5・6・8 inch
Sapphire and SiC wafers can be processed
Processed surface contactless tape peeling process
Protective tapes are peeled off from wafers without touching processed surfaces.
■Wafer Size: 5, 6 Inch
■Tape Type:UV tapes
■Characteristics:
●By Bernoulli chucking robotic arms, wafers are conveyed without being touched.
●After wafers are set on the stage for UV irradiation process, through this procedure, protective tapes on wafers are removed automatically.
Processed surface contactless tape peeling process

Processed surface contactless tape peeling process
Wafer Size: 5, 6 Inch
Processed surface contactless tape peeling process

Processed surface contactless tape peeling process
Post-polishing surfaces are very fragile. Micro-scratches can be caused easily if the surface is touched by any metallic equipment parts. This unit is capable of removing tapes without touching wafer surfaces.
RCA cleaning process for patterned wafers
■Available services
・RCA cleaning for wafers with metallic patterns (particle and metal contamination cleaning)
・RCA cleaning for filmed wafers (particle and metal contaminations cleaning)
・Wafer backside RCA cleaning for handle wafers or bonded wafers. (particle and metal contamination cleaning)

■Basic specifications
・Polished surface contactless automated conveyance (cassettes to cassettes) ・Simultaneous double chambered spinning method (RCA cleaning ⇒DIW rinsing⇒Drying)
・Cleaning metal contaminations by only one chemical treatment.
・4, 5, 6 and 8 inches can be processed with minimum thickness of 150um. (The process for under 150um is under development.)
・Handle wafers can be processed in Rokko.

■Cleanness (Patterned wafer backside)
Particles: ≧0.3um,≦50pcs/wf
Heavy metals:≦5.0E10atoms/p-2
(Ka,Ca,Ti,Cr,Mn,Fe,Co,Ni,Cu,Zn,Al,Na)


Click here for a demonstration of wafer backside RCA cleaning of patterned wafers→
YOUTUBE
RCA cleaning process for patterned wafers

RCA cleaning process for patterned wafers
Wafer Size: 4, 5, 6, 8 Inch
RCA cleaning process for patterned wafers

RCA cleaning process for patterned wafers
This equipment is capable of cleaning only onside (backside) without causing any damages on the other side.

■ Tools and Equipment
Fully automated giriding machine
  Single wafer system thin film polishing machine

1軸グラインダー
Capable of a single-wafer and multiple-wafer processes.

1軸グラインダー
Polishes wafers with high accuracy without contacting polishing surface. This machine is solely developed and customized by Rokko.
Capacitance wafer thickness measuring equpment TME-07
  Capacitance wafer thickness measuring equpment TME-07

枚葉式研磨機
This equipment unloads wafers from cassettes and measures thickness at a designated coordinate of wafer. The measurement is done by a contactless capacitance sensor.

枚葉式研磨機
Measurable thickness: 100-1800um (depends on wafer sizes)
Center point measurement (Coordinates can be set through the machine configuration)

Automatic spectral interference wafer thickness meter

分Automatic spectral interference wafer thickness meter
Thickness can be measured for the silicon layer only of the taped wafer・SOI・supported wafer・resin-material/tape supported wafer(in case 2 silicon wafers are attached, one side silicon layer can be measured).
Automatic spectral interference wafer thickness meter

Automatic spectral interference wafer thickness meter
Thickness can be measured for supporting silicon layer only or active layer only, other than the total thickness measurement of wafer, for the thinned MEMS/Sensor wafer.
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六甲電子株式会社
兵庫県西宮市中島町8番5号 TEL : 0798-65-4508
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