SiC:Rokko electronics Co., Ltd.


	Please contact ROKKO at Attention: Overseas Sales Dept. TEL: 81-798-65-4508 FAX: 81-798-67-5038

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ROKKO ELECTRONICS Co., Ltd.

Zipp: 663-8105
8-5, Nakajima-cho, Nishinomiya-city, Hyogo, Japan

New processing process for 6.8-inch SiC wafers
Back side thinning	：	Back grinding	⇒	CMP(Option)

Epi reclaim	：	Grinding	⇒	CMP	⇒	RCA cleaning
	⇒	SICA88	⇒	RCA cleaning

Film removal reclaim	：	Ething	⇒	RCA cleaning
		SICA88（Option)	●	TXRF（Option)	●	ICP-MS（Option)

Wafer making	：	Single-sided grinding	⇒	Single-sided grinding	⇒	Single-sided CMP
	⇒	Single-sided CMP	⇒	RCA cleaning	⇒	SICA88
		MEM（Option)	●	Tropel（Option)	●	Zygo（Option)

measurement service	：	MEM（潜傷)	●	Tropel（Flatness)	●	TXRF（contamination)
	●	ICP-MS（contamination)	●	SICA88（scratch)	●	Zygo（Surface roughness)

●　Increased processing capacity due to mass production

●　he silicon processing is completely separated, and the entire process from receiving to shipping is handled in-house.

●　Cost reduction through process shortening

■ 8-inch SiC wafer ultra-thinning process
		Examples of processing results for supported SiC wafers　⇒　60um

■ 8-inch SiC reclaim precision

8-inch SiC TTV accuracy per machining step

Original wafer

After grinding

After polishing

Unit: um	Original wafer	After grinding	After polishing
N number	4	4	4
Average	2.1	2.9	2
σ	0.37	0.22	0.65

8-inch SiC SBIR precision for each machining process
（Site Size XY 10*10mm Offset XY 0,0)

Original wafer

After grinding

After polishing

Unit: um	Original wafer	After grinding	After polishing
N number	4	4	4
Average	0.6	1.3	0.7
σ	0.1	0.02	0.06

8-inch SiC SFQR accuracy for each machining process
（Site Size XY 10*10mm Offset XY 0,0)

Original wafer

After grinding

After polishing

Unit: um	Original wafer	After grinding	After polishing
N number	4	4	4
Average	0.5	0.6	0.5
σ	0.03	0.03	0.01

8-inch SiC, 3pt-Warp precision for each machining step

Original wafer

After grinding

After polishing

Unit: um	Original wafer	After grinding	After polishing
N number	4	4	4
Average	11.1	47.4	13.5
σ	5.1	1.41	8.08

8-inch SiC surface roughness (Sa) and precision after polishing.

Center of wafer

Wafer outer periphery

Unit: um	Center of wafer	Wafer outer periphery
N number	4	4
Average	0.08	0.08
σ	0.01	0.01

■ 8-inch SiC: Defect inspection after polishing.
		Surface defect map (SICA88: Confocal differential interference microscope)


		潜傷MAP （Mirelis electron microscope 【MEM】）




BPD		潜傷

■ Film removal reclaim
		Etching　⇒　RCA cleaning

■ 6/8 inch various measurement services

●　Mirelis electron microscope 【MEM】
※8-inch SiC measurement available

※Contract inspection services available.
Used as a surface (Si surface) latent flaw inspection machine to check for processing damage and defects.

●　SiC wafer defect inspection and review system 【SICA88】
※8-inch SiC measurement available

※Contract inspection services available.
Used for scratch inspection of surfaces (Si side and C side), and for checking pits, defects, etc.

●　Wafer flatness measurement and analysis system
【Tropel】

※Contract inspection services available.
Used to check flatness before and after processing.
TTV, NTV, SORI, BOW, WARP, etc.

●　Surface roughness measuring instrument 【Zygo】

※Contract inspection services available.
Used for checking surface roughness after machining (non-contact measurement).
Roughness measurement after grinding and CMP (Chemical Modulation).

●　Total Internal Reflection X-ray Fluorescence Analyzer 【TXRF】

※Contract inspection services available.
Metal contamination and full-surface sweep measurement possible《[S Cl K Ca Ti Cr Mn Fe Co Ni Cu Zn》

●　Inductively coupled plasma mass spectrometer
【ICP-MS】

※Contract inspection services available.
Metal contamination and various metals can be measured

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