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Sensor Devices


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ROKKO ELECTRONICS Co., Ltd.

Zipp: 663-8105
8-5, Nakajima-cho, Nishinomiya-city, Hyogo, Japan



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▼ Sensor Devices

In the sensor device process, firstly,electric circuits (patterns) are formed on wafer front surface. Secondly, backside of wafer is grinded for thinning. Wafer with device patterns are very valuable to customers and they need to be handled with care. Rokko’s process is able to treat wafers without damaging patterns with severely selected protection tapes. Similar to the power device grinding services, a special grinding wheel that stimulates growth of a gettering layer on processing surface is also available.
Rokko’s strength lies in the well-developed sensor device process technologies that enable the company to provide integrated grinding and polishing services.


■ Tools and Equipment
Wafer protection tape applicator

  Fully automated grinding machine

Wafer protection tape applicator
After incoming inspection, pressure sensor or UV tapes are applied on wafers. Taped wafers are inspected of adhered dusts during this process.

Fully automated grinding machine
Capable of polishing wafers of 4 to 8 inch without influencing flatness characteristics.
Visual inspection
  Single wafer system polishing machine

Visual inpsection
Wafer appearance is checked in this process.

Single wafer system polishing machine
Polishes wafers to meet customer’s thickness specification.
Non-contact type processing surface tape remover   Ultrasonic cleaning tool

Non-contact type processing surface tape remove
Remove tapes without contacting processed surface.

Ultrasonic cleaning tool
Cleans wafers by ultrasonic after removal of tapes.
    Final inspection



Final inspection
Wafers are inspected based on customer’s visual inspection criteria.

● Automatic spectral interference wafer thickness meter

Automatic spectral interference wafer thickness meter
Thickness can be measured for the silicon layer only of the taped wafer・SOI・supported wafer・resin-material/tape supported wafer(in case 2 silicon wafers are attached, one side silicon layer can be measured).
● Automatic spectral interference wafer thickness meter

Automatic spectral interference wafer thickness meter
Thickness can be measured for supporting silicon layer only or active layer only, other than the total thickness measurement of wafer, for the thinned MEMS/Sensor wafer.
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TEL : 81-798-65-4508
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