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Inspection Equipment


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ROKKO ELECTRONICS Co., Ltd.

Zipp: 663-8105
8-5, Nakajima-cho, Nishinomiya-city, Hyogo, Japan



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▼ Inspection Equipment

Rokko is making continuous efforts to develop new technologies in not only Si wafer but also sapphire and SiC process through our cultivated experiences in grinding, polishing and cleaning fields. We believe customer satisfaction is the base of our technology development and our success cannt be achieved without the support from our customers. Based on this standard, we will make further efforts to ensure the satisfaction by introducing cutting edge equipment and technologies.

● Automatic spectral interference wafer thickness meter

Automatic spectral interference wafer thickness meter
Thickness can be measured for the silicon layer only of the taped wafer・SOI・supported wafer・resin-material/tape supported wafer(in case 2 silicon wafers are attached, one side silicon layer can be measured).
● Automatic spectral interference wafer thickness meter

Automatic spectral interference wafer thickness meter
Thickness can be measured for supporting silicon layer only or active layer only, other than the total thickness measurement of wafer, for the thinned MEMS/Sensor wafer.

New equipment:Wafer sorter for resistivity・P/N・thickness
● Wafer sorter for resistivity・P/N・thickness

Wafer sorter for resistivity・P/N・thickness
For 4,5,6,8 inch
● Wafer sorter for resistivity・P/N・thickness

Wafer sorter for resistivity・P/N・thickness
Measurable resistivity:1.0m~3.0MΩ・cm

Candela CS20 Wafer surface inspection machine

  Candela CS20 Wafer surface inspection machine

Candela CS20 Wafer surface inspection machine
This is used for transparent substrates to inspect various defects, dirt, pits on Epi layers, hatching and crystal damages.

Candela CS20 Wafer surface inspection machine
Wafer Size: 3, 4, 5, and 6 Inch
Measurable thickness: 300-1400um
Capacitance wafer thickness measuring equpment TME-07
  Capacitance wafer thickness measuring equpment TME-07

Capacitance wafer thickness measuring equpment
This equipment unloads wafers from cassettes and measures thickness at a designated coordinate of wafer. The measurement is done by a contactless capacitance sensor.

Capacitance wafer thickness measuring equpment
Measurable thickness: 100-1800um (depends on wafer sizes)
Center point measurement (Coordinates can be set through the machine configuration)
Total reflection x-ray fluorescence analysis tool TREX610   Differential interference contrast microscope

Total reflection x-ray fluorescence analysis tool
Measurable elements: 12 elements (S, Cl, K, Ca, Ti, Cr,Mn,Fe,Co,Ni,Cu,Zn)

Differential interference contrast microscope
This tool allows to observe roughness on a wafer surface.
Wafer surface laser inspection tool TOPCON WM7   Wafer surface laser inspection tool TOPCON WM3

Wafer surface laser inspection tool
Detection limit: 7um
Unit: Long-life Violet LD laser type
Wafer Size: 4, 5 and 6 Inch
Ranges:0.087μ~5.0μ

Wafer surface laser inspection tool
Wafer Size: 4, 5 and 6 Inch
Rages:0.208μ~1.0μ
Wafer surface laser inspection tool LS6030   Visual inspection

Wafer surface laser inspection tool
Wafer Size: 5, 6, 8 Inch
Ranges:0.1μ~5.0μ

Visual inspection
Wafers are inspected under a halogen lamp in a dark room.
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